A numerical model for inductively heated cylindrical silicon tube growth system

Citation
A. Roy et al., A numerical model for inductively heated cylindrical silicon tube growth system, J CRYST GR, 211(1-4), 2000, pp. 365-371
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
0022-0248 → ACNP
Volume
211
Issue
1-4
Year of publication
2000
Pages
365 - 371
Database
ISI
SICI code
0022-0248(200004)211:1-4<365:ANMFIH>2.0.ZU;2-P
Abstract
Growth of large diameter silicon tubes can bring further advancements in th e photovoltaic technology. Efforts are underway to grow first 50 cm and the n 100 cm diameter tube using the current octagonal tube growth technique. A two-dimensional axisymmetric numerical model has been developed to simulat e and design a large diameter cylindrical tube growth system. The model use s magnetic vector potential equation to predict the induced magnetic field and heat generation due to magnetic induction. A conduction-based model tha t accounts for the heat transfer by conduction, convection and radiation in various components of the system is employed to calculate the temperature held. The model predictions agree well with the experimental data. A parame tric study is performed to examine the effects of number of coils, current, position of coil and geometry of the growth system, and to obtain the desi red temperature profile. Numerical results for magnetic and thermal fields are presented for various cases. The goal of this investigation is to optim ize the system with respect to the die tip temperature and temperature prof ile in the grown tube. (C) 2000 Elsevier Science B.V. All rights reserved.