Modeling of silicon carbide crystal growth by physical vapor transport method

Citation
Rh. Ma et al., Modeling of silicon carbide crystal growth by physical vapor transport method, J CRYST GR, 211(1-4), 2000, pp. 352-359
Citations number
16
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
0022-0248 → ACNP
Volume
211
Issue
1-4
Year of publication
2000
Pages
352 - 359
Database
ISI
SICI code
0022-0248(200004)211:1-4<352:MOSCCG>2.0.ZU;2-S
Abstract
A numerical model has been developed to study heat transfer in a silicon ca rbide crystal growth system. Both the electromagnetic field and temperature distribution are calculated and the effects of as-grown crystal length and coil current on temperature field are investigated. An order-of-magnitude analysis and one-dimensional network model are also employed to investigate the transport phenomena in the growth system. The results obtained from th e network analysis compare well with the two-dimensional simulations. Thr i nterface temperature is found to increase with the ingot length, and a nonl inear relationship exists between the maximum temperature in the furnace an d electric current. (C) 2000 Elsevier Science B.V. All rights reserved.