Proton bombardment for enhanced four-wave mixing in InGaAsP-InP waveguides

Citation
Er. Thoen et al., Proton bombardment for enhanced four-wave mixing in InGaAsP-InP waveguides, IEEE PHOTON, 12(3), 2000, pp. 311-313
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
1041-1135 → ACNP
Volume
12
Issue
3
Year of publication
2000
Pages
311 - 313
Database
ISI
SICI code
1041-1135(200003)12:3<311:PBFEFM>2.0.ZU;2-2
Abstract
A model for the transmission and four-wave mixing (FWM) conversion efficien cy of InGaAsP-InP passive quantum-wed (QW) waveguides which includes the ef fect of an additional nonlinear loss due to the accumulation of photogenera ted free carriers is introduced and compared to experimental measurements. The model accurately describes the observed loss at high average powers and predicts that a reduction in the carrier lifetime of 10-100 times should e ffectively eliminate free carrier effects. Proton bombardment was investiga ted as a means of reducing the carrier lifetime, and both the conversion ef ficiency and relative transmission of proton bombarded single QW and multip le QW devices were significantly improved compared to unbombarded devices.