Process monitoring of semiconductor thin films and interfaces by spectroellipsometry

Citation
R. Brenot et al., Process monitoring of semiconductor thin films and interfaces by spectroellipsometry, APPL SURF S, 154, 2000, pp. 283-290
Citations number
18
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
0169-4332 → ACNP
Volume
154
Year of publication
2000
Pages
283 - 290
Database
ISI
SICI code
0169-4332(200002)154:<283:PMOSTF>2.0.ZU;2-4
Abstract
Real-time monitoring of the growth of plasma deposited microcrystalline sil icon (mu c-Si:H) by multi-wavelength phase-modulated ellipsometry is presen ted. Several growth models for process-monitoring are reviewed. In particul ar the inhomogeneity in mu c-Si layers is treated by allowing graded-index profile in the bulk. Using the Bruggeman effective medium theory, we descri be the optical properties of mu c-Si and the monitoring of the crystallinit y in the upper and lower parts of the layer, and the thickness. The inversi on algorithm is very fast, with calculation times within 5 s using typical PC. This method opens up ways for precise control of surface roughness, bul k thickness, and crystallization of both the top and bottom interfaces of t he layer during processing devices such as solar cells and thin film transi stors. (C) 2000 Elsevier Science B.V. All rights reserved.