Epitaxial SrRuO3 thin films on LaAlO3(100) and Si(100)

Citation
J. Roldan et al., Epitaxial SrRuO3 thin films on LaAlO3(100) and Si(100), APPL SURF S, 154, 2000, pp. 159-164
Citations number
19
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
0169-4332 → ACNP
Volume
154
Year of publication
2000
Pages
159 - 164
Database
ISI
SICI code
0169-4332(200002)154:<159:ESTFOL>2.0.ZU;2-M
Abstract
Epitaxial SrRuO3 (SRO) thin films were deposited by pulsed laser deposition on LaAlO3(100) and Si(100) substrates, A study of the influence of substra te temperature and oxygen partial pressure on the structural and electrical properties is presented for films deposited on LaAlO3(100). The dependence of the properties of SRO on film thickness was also studied. The crystal p roperties improved when a SrTiO3 (STO) seed layer was used, although the su rface of the SRO films deposited on this layer had a high density of outgro wths. SRO thin films deposited on Si(100) were epitaxial when an yttria-sta bilised zirconia (YSZ) buffer layer was used. The crystal structure and mor phology of these films was determined. (C) 2000 Elsevier Science B.V. All r ights reserved.