Role of the surface roughness in laser induced crystallization of nanostructured silicon films

Citation
A. Hadjadj et al., Role of the surface roughness in laser induced crystallization of nanostructured silicon films, J VAC SCI A, 18(2), 2000, pp. 529-535
Citations number
44
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
0734-2101 → ACNP
Volume
18
Issue
2
Year of publication
2000
Pages
529 - 535
Database
ISI
SICI code
0734-2101(200003/04)18:2<529:ROTSRI>2.0.ZU;2-Q
Abstract
The crystallization of hydrogenated nanostructured silicon (ns-Si:H) films deposited from Ar-silane mixture in a low-pressure pulsed radio-frequency g low discharge has been studied in relation with their structural and morpho logical properties. Different techniques' of characterization converge to t he fact that both the porosity and the surface roughness of the film increa se with the plasma duration (T-on) used for the deposition. The correlation between the film structure and the crystallization threshold has been inve stigated. The modifications of the bulk structure of the film with T-on par tly explain the decrease of the crystallization threshold (E-cryst) The rol e of the surface roughness in the lowering of the crystallization threshold is emphasized. Its contribution is interpreted by the enhancement of the e lectromagnetic field at the ns-Si:H him surface. (C) 2000 American Vacuum S ociety. [S0734-2101(00)09402-1].