An electrically injected InGaN/GaN-based distributed Bragg reflector (DBR)
laser was demonstrated. Surface grating was formed on both sides of ridge w
aveguide by chemically assisted ion beam etching technique. The observed th
reshold current was 375 mA with threshold voltage of 15.1 V for 500x3 mu m(
2) devices. The emission of the DBR laser occurred in a single longitudinal
mode at a wavelength of 401.3 nm. The ratio of sidemode suppression was fo
und to be more than 13 dB until a current injection of 1 A. (C) 2000 Americ
an Institute of Physics. [S0003-6951(00)00512-X].