InGaN/GaN multi-quantum well distributed Bragg reflector laser diode

Citation
Jh. Cho et al., InGaN/GaN multi-quantum well distributed Bragg reflector laser diode, APPL PHYS L, 76(12), 2000, pp. 1489-1491
Citations number
8
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
76
Issue
12
Year of publication
2000
Pages
1489 - 1491
Database
ISI
SICI code
0003-6951(20000320)76:12<1489:IMWDBR>2.0.ZU;2-A
Abstract
An electrically injected InGaN/GaN-based distributed Bragg reflector (DBR) laser was demonstrated. Surface grating was formed on both sides of ridge w aveguide by chemically assisted ion beam etching technique. The observed th reshold current was 375 mA with threshold voltage of 15.1 V for 500x3 mu m( 2) devices. The emission of the DBR laser occurred in a single longitudinal mode at a wavelength of 401.3 nm. The ratio of sidemode suppression was fo und to be more than 13 dB until a current injection of 1 A. (C) 2000 Americ an Institute of Physics. [S0003-6951(00)00512-X].