The use of a surfactant (Sb) to induce triple period ordering in GaInP

Citation
Cm. Fetzer et al., The use of a surfactant (Sb) to induce triple period ordering in GaInP, APPL PHYS L, 76(11), 2000, pp. 1440-1442
Citations number
19
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
76
Issue
11
Year of publication
2000
Pages
1440 - 1442
Database
ISI
SICI code
0003-6951(20000313)76:11<1440:TUOAS(>2.0.ZU;2-1
Abstract
A surfactant is used to induce an ordered structure in an epitaxial layer. The addition of small amounts of triethylantimony during the organometallic vapor phase epitaxy growth of GaInP on (001) GaAs substrates is shown to r emove CuPt ordering with a resultant increase in band gap energy. Increasin g the concentration of Sb in the vapor beyond a critical Sb to P ratio [Sb/ P(v)] of 4x10(-4) gives a reversal of this behavior. The band gap energy is observed to decrease by 50 meV at a concentration of Sb/P(v)=1.6x10(-) (3) , coincident with the formation of an ordered phase with a period triple th e normal lattice spacing along the [111] and [(1) over bar (1) over bar 1] directions. The formation of this new ordered structure is believed to be r elated to high concentrations of Sb on the surface, which leads to a change in the surface reconstruction from (2x4)-like to (2x3)-like, as indicated by surface photoabsorption performed in situ. (C) 2000 American Institute o f Physics. [S0003-6951(00)02011-8].