A surfactant is used to induce an ordered structure in an epitaxial layer.
The addition of small amounts of triethylantimony during the organometallic
vapor phase epitaxy growth of GaInP on (001) GaAs substrates is shown to r
emove CuPt ordering with a resultant increase in band gap energy. Increasin
g the concentration of Sb in the vapor beyond a critical Sb to P ratio [Sb/
P(v)] of 4x10(-4) gives a reversal of this behavior. The band gap energy is
observed to decrease by 50 meV at a concentration of Sb/P(v)=1.6x10(-) (3)
, coincident with the formation of an ordered phase with a period triple th
e normal lattice spacing along the  and [(1) over bar (1) over bar 1]
directions. The formation of this new ordered structure is believed to be r
elated to high concentrations of Sb on the surface, which leads to a change
in the surface reconstruction from (2x4)-like to (2x3)-like, as indicated
by surface photoabsorption performed in situ. (C) 2000 American Institute o
f Physics. [S0003-6951(00)02011-8].