Measurement of local lattice parameter in ion-implanted silicon using HOLZlines

Citation
F. Uesugi et al., Measurement of local lattice parameter in ion-implanted silicon using HOLZlines, PHYS ST S-A, 177(2), 2000, pp. 331-339
Citations number
27
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
0031-8965 → ACNP
Volume
177
Issue
2
Year of publication
2000
Pages
331 - 339
Database
ISI
SICI code
0031-8965(200002)177:2<331:MOLLPI>2.0.ZU;2-P
Abstract
A simple algorithm based on a dynamical fitting simulation of higher-order Lane zone (HOLZ) lines is demonstrated, which presents a profile of lattice parameter with a spatial resolution of several nanometers. The proposed pr ocedure is tested on arsenic ion-implanted silicon, being shown to be appre ciable to accurate determination of lattice par ameter by selecting a weak zone axis with anp restriction. By comparing with the arsenic distribution, the small lattice elongation observed beneath the ion-implanted surface is due to AsmVn complexes and the small increase beneath the amorphous-crysta lline interface due to self-interstitials or their complexes.