Ordered nucleation of Ge islands along high index planes on Si

Citation
L. Vescan et al., Ordered nucleation of Ge islands along high index planes on Si, MAT SCI E B, 69, 2000, pp. 324-328
Citations number
23
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
0921-5107 → ACNP
Volume
69
Year of publication
2000
Pages
324 - 328
Database
ISI
SICI code
0921-5107(20000119)69:<324:ONOGIA>2.0.ZU;2-1
Abstract
Lateral ordering of Ge islands along [100] directions is observed when the growth is performed on Si mesas with crystallographic planes of the (100) z one. The islands nucleate in single one-dimensional rows along the intersec tion line between {01h} facets with a {011} plane. The high index planes we re generated by using selective epitaxial growth of Si for the formation of faceted mesas. On these mesas Ge was deposited at 700 degrees C with a low growth rate (0.04 ML s(-1)) so as to achieve on large areas a monomodal is land distribution (medium sized islands known as dome clusters). However. o n the (001) part of the Si mesas one observes a transition from monomodal t o bimodal distribution. On small areas (small total coverage) only ordered islands of medium size along the edges are present. On larger mesas (higher total coverage) beside the ordered rows with medium size islands also smal l sized islands (30 nm diameter, 1 nm height, density 8 x 10(9) cm(-2)) nuc leate on the (001) plane. At even higher coverage medium sized islands are also created on the (001) plane. The higher nucleation probability of islan ds on the high index planes must be due to a lower energy barrier for nucle ation on these planes. The ordering on mesas (even as large as 200 x 200 mu m(2)) must be related with a high surface diffusion length, lambda(Ge) for the Ge atoms on the strained wetting (001) layer. From lambda(Ge) similar to 100 mu m an activation energy for Ge migrating on strained Ge (001) E-s similar to 0.65 eV could be evaluated. (C) 2000 Elsevier Science S.A. All r ights reserved.