Microcrystalline silicon deposited by the hot-wire CVD technique

Citation
J. Guillet et al., Microcrystalline silicon deposited by the hot-wire CVD technique, MAT SCI E B, 69, 2000, pp. 284-288
Citations number
15
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
0921-5107 → ACNP
Volume
69
Year of publication
2000
Pages
284 - 288
Database
ISI
SICI code
0921-5107(20000119)69:<284:MSDBTH>2.0.ZU;2-2
Abstract
Hot-wire chemical vapour deposition (HW-CVD) is a well-known technique to d eposit amorphous silicon with high deposition rates from the decomposition of silane and hydrogen gases. By changing the hydrogen and silane how rates , it is possible to observe a transition from amorphous silicon (a-Si:H) to microcrystalline silicon (mu c-Si:H). In this study, structural and electr ical properties of layers deposited as a function of silane concentration i n the gas are presented. Ellipsometry and X-ray diffractometry have been us ed to assess the structure of the films. Steady-state photoconductivity, st eady-stale photocarrier grating, and modulated photocurrent experiments hav e been carried out to characterise both majority and minority carrier trans port properties. Finally. the addition of phosphine and diborane in the rea ctor allows the deposition of n- and p-type layers with conductivities up t o 10 and 1 s cm(-1), respectively. making possible the realisation of HW-CV D solar cells. (C) 2000 Elsevier Science S.A. All rights reserved.