The Hall effect and magnetoresistance were measured in the InAs/GaAs hetero
structure at temperatures from 300 K down to 3 K, in a magnetic field range
from 0.01 to 1.5 T. The anomalous magnetic field dependence of the Hall co
efficient in the InAs/GaAs heterostructure in magnetic fields below 0.1 T w
as explained as due to an extraordinary Hall effect caused by skew scatteri
ng on dislocations.