Anomalous behavior of the Hall effect in III-V hetero structures

Citation
Z. Dziuba et al., Anomalous behavior of the Hall effect in III-V hetero structures, ACT PHY P A, 97(2), 2000, pp. 331-336
Citations number
34
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
ACTA PHYSICA POLONICA A
ISSN journal
0587-4246 → ACNP
Volume
97
Issue
2
Year of publication
2000
Pages
331 - 336
Database
ISI
SICI code
0587-4246(200002)97:2<331:ABOTHE>2.0.ZU;2-F
Abstract
The Hall effect and magnetoresistance were measured in the InAs/GaAs hetero structure at temperatures from 300 K down to 3 K, in a magnetic field range from 0.01 to 1.5 T. The anomalous magnetic field dependence of the Hall co efficient in the InAs/GaAs heterostructure in magnetic fields below 0.1 T w as explained as due to an extraordinary Hall effect caused by skew scatteri ng on dislocations.