Electrochemical deposition of SnS thin films

Citation
M. Ichimura et al., Electrochemical deposition of SnS thin films, THIN SOL FI, 361, 2000, pp. 98-101
Citations number
8
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
0040-6090 → ACNP
Volume
361
Year of publication
2000
Pages
98 - 101
Database
ISI
SICI code
0040-6090(20000221)361:<98:EDOSTF>2.0.ZU;2-R
Abstract
SnS has a bandgap around 1.0-1.3 eV and the p-type conductivity, and theref ore is suitable for the absorption layer in solar cells. In this study, Sn was deposited onto In2O3-coated glass substrates by electrochemical deposit ion from aqueous solutions and characterized chemically, structurally, and optically. The deposition bath contained SnSO4 and Na2S2O3. The deposited S nS was polycrystalline and of orthorhombic structure, and its composition w as slightly Sn-rich. The direct bandgap was estimated to be 1.3 eV from opt ical transmission spectra. The relationship between the Blm properties and the deposition parameters was investigated to optimize the deposition condi tion. (C) 2000 Elsevier Science S.A. All rights reserved.