Dielectric, ferroelectric properties of KTa0.65Nb0.35O3 thin films prepared by sol-gel process on Pt(111)/Ti/MgO(100) substrates

Citation
Sm. Wang et al., Dielectric, ferroelectric properties of KTa0.65Nb0.35O3 thin films prepared by sol-gel process on Pt(111)/Ti/MgO(100) substrates, J SOL-GEL S, 17(2), 2000, pp. 159-162
Citations number
12
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science & Engineering
Journal title
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY
ISSN journal
0928-0707 → ACNP
Volume
17
Issue
2
Year of publication
2000
Pages
159 - 162
Database
ISI
SICI code
0928-0707(200002)17:2<159:DFPOKT>2.0.ZU;2-O
Abstract
KTa0.65Nb0.35O3(KTN) thin films were prepared by sol-gel process on Pt(111) /Ti/MgO(100) substrates from KOAc, Ta(OC2H5)(5) and Nb(OC2H5)(5) in ethanol . The KTN thin films had a prefferred (100) orientation on Pt(111)/Ti/MgO(1 00) substrates and contained a small amount of pyrochlore structure phase. The 0.8-mu m-thick KTN film showed a room-temperature relative permittivity of 2160 and a room-temperature dielectric loss of 0.0098 at 1.0 kHz. The m aximum relative permittivity of the KTN film was 4232 at 294 K and 1.0 kHz. The remanent polarization and coercive field of the KTN film were 2.8 mu C /cm(2) and 5.0 kV/cm, respectively, at 263 K.