The role of growth rates and buffer layer structures for quality improvement of cubic GaN grown on GaAs

Citation
M. Ogawa et al., The role of growth rates and buffer layer structures for quality improvement of cubic GaN grown on GaAs, JPN J A P 2, 39(2A), 2000, pp. L69-L72
Citations number
8
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
39
Issue
2A
Year of publication
2000
Pages
L69 - L72
Database
ISI
SICI code
0021-4922(20000201)39:2A<L69:TROGRA>2.0.ZU;2-A
Abstract
Cubic GaN (c-GaN) layers are gr own on GaAs(001) substrates by metalorpanic vapor phase epitaxy. To attain high-quality c-GaN, we investigate growth c onditions and buffer layer structures. It is found that by increasing the g rowth rate from 0.35 to 1.05 mu m/h, the growth temperature region where th e c-GaN composition reaches its maximum (90%) is shifted from 700-800 degre es C to 850-900 degrees C. Regarding the film properties, excitonic emissio n and high resistivity are realized with the faster growth rate. Subsequent ly, the c-GaN composition is improved by the use of a double buffer layer ( DBL) structure instead of the conventional single buffer layer structure wi thout degrading the achieved optical and electrical properties. The DBL str ucture preserves a relatively high c-GaN composition even in thick layers.