A novel technique for measuring etch rate distribution of Si

Citation
H. Yang et al., A novel technique for measuring etch rate distribution of Si, SENS ACTU-A, 79(2), 2000, pp. 136-140
Citations number
8
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS A-PHYSICAL
ISSN journal
0924-4247 → ACNP
Volume
79
Issue
2
Year of publication
2000
Pages
136 - 140
Database
ISI
SICI code
0924-4247(20000201)79:2<136:ANTFME>2.0.ZU;2-B
Abstract
Three-dimensional etch rate distribution of Si is necessary in analyzing th e anisotropic etching of Si. As three-dimensional etch rate distribution ca n be composed by a series of two-dimensional distributions, a novel method is suggested in this paper for measuring the two-dimensional distributions with simple tools and high efficiency. For example, vertical sidewalls of a series of U-shaped trenches in (0mn) silicon wafers are first created by d eep reactive ion etching (DRIE) technique. By measuring the etch rates in n ormal directions of the vertical sidewalls, two-dimensional distributions o f etch rate in (0mn) planes can be found. As the height of vertical sidewal ls formed by DRIE can be very large, the planes of sidewall can withstand a relatively long etch time before they are replaced by emerging slow etchin g planes. No special measuring facilities but a conventional microscope is needed for the measurement. Presented in this paper are etch rate distribut ions in (001) and (0 (1) over bar 1) crystal planes in 40% KOH and 25% TMAH . (C) 2000 Elsevier Science S.A. All rights reserved.