High-voltage breakdown studies on Si microstrip detectors

Citation
S. Albergo et al., High-voltage breakdown studies on Si microstrip detectors, NUOV CIM A, 112(11), 1999, pp. 1271-1283
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA A-NUCLEI PARTICLES AND FIELDS
ISSN journal
1124-1861 → ACNP
Volume
112
Issue
11
Year of publication
1999
Pages
1271 - 1283
Database
ISI
SICI code
1124-1861(199911)112:11<1271:HBSOSM>2.0.ZU;2-W
Abstract
The breakdown performance of CMS barrel module prototype detectors and test devices with single and multi-guard structures were studied before and aft er neutron irradiation up to 2.10(14) 1 MeV equivalent neutrons. Before irr adiation avalanche breakdown occurred at the guard ring implant edges. We m easured 100-300 V higher breakdown voltage values for the devices with mult i-guard than for devices with single-guard ring. After irradiation and type inversion the breakdown was smoother than before irradiation and the break down voltage value increased to 500-600 V for most of the devices.