For the construction of the silicon microstrip detectors for the Tracker of
the CMS experiment, two different substrate choices were investigated. A h
igh-resistivity (6 k Omega cm) substrate with (111) crystal orientation and
a low-resistivity (2 k Omega cm) one with (100) crystal orientation. The i
nterstrip and backplane capacitances mere measured before and after the exp
osure to radiation in a range of strip pitches from 60 mu m to 240 mu m and
for values of the width-over-pitch ratio between 0.1 and 0.5.