Electronic transitions of electrons bound to phosphorus donors in diamond

Citation
E. Gheeraert et al., Electronic transitions of electrons bound to phosphorus donors in diamond, SOL ST COMM, 113(10), 2000, pp. 577-580
Citations number
14
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
0038-1098 → ACNP
Volume
113
Issue
10
Year of publication
2000
Pages
577 - 580
Database
ISI
SICI code
0038-1098(2000)113:10<577:ETOEBT>2.0.ZU;2-F
Abstract
A set of phosphorus doped CVD diamond films was investigated by infrared ab sorption spectroscopy. The photo-ionisation continuum intensity increases c onsistently with the phosphorus concentration. Two peaks, at 523 and 562 me V, were observed for the first time, and are attributed to electronic trans itions from the phosphorus ground level to the 2P(0) and 2P(+/-) excited st ates, in good agreement with the effective mass approximation. The optical ionisation energy deduced is 600 meV (+/-20 meV), consistent with Hall effe ct measurements. (C) 2000 Elsevier Science Ltd. All rights reserved.