Characterisation by thermoluminescence of boron doped polycrystalline diamond films

Citation
M. Benabdesselam et al., Characterisation by thermoluminescence of boron doped polycrystalline diamond films, DIAM RELAT, 9(1), 2000, pp. 56-60
Citations number
22
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
0925-9635 → ACNP
Volume
9
Issue
1
Year of publication
2000
Pages
56 - 60
Database
ISI
SICI code
0925-9635(200001)9:1<56:CBTOBD>2.0.ZU;2-E
Abstract
Undoped polycrystalline diamond presents two thermoluminescent (TL) peaks a t 480 and 560 K which may potentially be used for ionising radiation dosime try. In order to increase the TL response sensitivity, CVD diamond samples doped with various boron concentrations have been elaborated. The sim of this wo rk is to investigate the TL properties of these samples in relation with th e boron concentration. For concentrations lower than 15 ppm (3 x 10(18) cm( -3)), the intensity of the 480 and 560 K TL peaks are effectively the most important, but for concentration values higher than 15 ppm, the TL signal d ecreases. Simultaneously, a new peak appears at 340 K. TL mechanisms relate d to these peaks are discussed. (C) 2000 Elsevier Science S.A. All rights r eserved.