Growth and characterization of hypothetical zinc-blende ZnO films on GaAs(001) substrates with ZnS buffer layers

Citation
Abma. Ashrafi et al., Growth and characterization of hypothetical zinc-blende ZnO films on GaAs(001) substrates with ZnS buffer layers, APPL PHYS L, 76(5), 2000, pp. 550-552
Citations number
7
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
76
Issue
5
Year of publication
2000
Pages
550 - 552
Database
ISI
SICI code
0003-6951(20000131)76:5<550:GACOHZ>2.0.ZU;2-V
Abstract
A stable wurtzite phase of ZnO is commonly observed. In this letter, we rep ort the growth and characterization of zinc-blende ZnO on GaAs(001) substra tes. The ZnO films grown on GaAs(001) substrates using microwave-plasma-ass isted metalorganic molecular-beam epitaxy were characterized by reflection high-energy electron diffraction, x-ray diffraction, transmission electron microscope, and atomic force microscope measurements. The use of a ZnS buff er layer was found to lead to the growth of the zinc-blende ZnO films. Alth ough the zinc-blende ZnO films were polycrystalline with columnar structure s, they showed bright band-edge luminescence at room temperature. (C) 2000 American Institute of Physics. [S0003-6951(00)01005-6].