Stability of Si-interstitial defects: From point to extended defects

Citation
J. Kim et al., Stability of Si-interstitial defects: From point to extended defects, PHYS REV L, 84(3), 2000, pp. 503-506
Citations number
21
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
0031-9007 → ACNP
Volume
84
Issue
3
Year of publication
2000
Pages
503 - 506
Database
ISI
SICI code
0031-9007(20000117)84:3<503:SOSDFP>2.0.ZU;2-Z
Abstract
Trends in the growth of extended interstitial defects are extracted from ex tensive tight-binding and ab inito local density approximation simulations. With an increasing number of interstitials, the stable defect shape evolve s from compact to chainlike to rodlike. The rodlike {311} defect, formed fr om (011) interstitial chains, is stabilized as it grows, elongating in the chain direction. Accurate parametrization of the defect-formation energy on the number of interstitials and interstitial chains, together with the ani sotropy of the interstitial capture radius. enables macroscopic defect-grow th simulations.PACS numbers: 61.72.Cc, 61.72.Ji, 71.55.-i.