Charge collection efficiency of irradiated silicon detector operated at cryogenic temperatures

Citation
K. Borer et al., Charge collection efficiency of irradiated silicon detector operated at cryogenic temperatures, NUCL INST A, 440(1), 2000, pp. 5-16
Citations number
11
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
0168-9002 → ACNP
Volume
440
Issue
1
Year of publication
2000
Pages
5 - 16
Database
ISI
SICI code
0168-9002(20000121)440:1<5:CCEOIS>2.0.ZU;2-C
Abstract
The charge collection efficiency (CCE) of heavily irradiated silicon diode detectors was investigated at temperatures between 77 and 200 K. The CCE wa s found to depend on the radiation dose, bias voltage value and history, te mperature, and bias current generated by light. The detector irradiated to the highest fluence 2 x 10(15) n/cm(2) yields a MIP signal of at least 1500 0 e(-) both at 250 V forward bias voltage, and at 250 V reverse bias voltag e in the presence of a light-generated current. The "Lazarus effect" was th us shown to extend to fluences at least ten times higher than was previousl y studied. (C) 2000 Elsevier Science B.V. All rights reserved.