Integration and electrical properties of diffusion barrier for high density ferroelectric memory

Citation
Yj. Song et al., Integration and electrical properties of diffusion barrier for high density ferroelectric memory, APPL PHYS L, 76(4), 2000, pp. 451-453
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
76
Issue
4
Year of publication
2000
Pages
451 - 453
Database
ISI
SICI code
0003-6951(20000124)76:4<451:IAEPOD>2.0.ZU;2-2
Abstract
A reliable Ir diffusion barrier was prepared on polysilicon plugged substra te with a contact size of 0.6 mu m. Using a Ti adhesion layer and stress-re lief process, it was possible to integrate the Ir barrier into a high densi ty 4 Mb ferroelectric random access memory device. After heat treating sol- gel derived Pb(Zr1-xTix)O-3 (PZT) films at 700 degrees C, the Ir barrier co ntact displayed an ohmic behavior and showed a low resistance of 130 Omega per contact in 1k serial contact array. The PZT films on Pt/IrO2/Ir poly-pl ugged substrate exhibited excellent ferroelectric properties such as remnan t polarization and coercive voltage of 25 mu C/cm(2) and 1.15 V, respective ly. Auger depth profile and transmission electron microscopy analyses confi rmed that no appreciable oxidation was formed between the Ir barrier and th e polysilicon plug. (C) 2000 American Institute of Physics. [S0003-6951(00) 01904-5].