Study on gas-sensing properties of Cd1-xAgxIn2O4 semiconductor materials

Citation
Xf. Chu et al., Study on gas-sensing properties of Cd1-xAgxIn2O4 semiconductor materials, SENS ACTU-B, 61(1-3), 1999, pp. 19-22
Citations number
5
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS B-CHEMICAL
ISSN journal
0925-4005 → ACNP
Volume
61
Issue
1-3
Year of publication
1999
Pages
19 - 22
Database
ISI
SICI code
0925-4005(199912)61:1-3<19:SOGPOC>2.0.ZU;2-L
Abstract
Cd1-xAgxIn2O4 (0.0 less than or equal to x less than or equal to 0.30) were synthesized with a chemical coprecipitation method. The phase constituents of Ag doped Cdln(2)O(4) materials were characterized by X-ray diffraction (XRD). Indirect-heating sensors were fabricated based on the materials. It is found that the Cd0.09Ag(0.10)In(2)O(4)-based sensor shows lower conducti vity and exhibits higher sensitivity to reducing gases and shorter response times than CdIn2O4-based sensor. (C) 1999 Elsevier Science S.A. All rights reserved.