Real-time monitoring of InAs/GaAs quantum dot growth using ultraviolet light scattering

Citation
T. Pinnington et al., Real-time monitoring of InAs/GaAs quantum dot growth using ultraviolet light scattering, PHYS REV B, 60(23), 1999, pp. 15901-15909
Citations number
21
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
0163-1829 → ACNP
Volume
60
Issue
23
Year of publication
1999
Pages
15901 - 15909
Database
ISI
SICI code
0163-1829(199912)60:23<15901:RMOIQD>2.0.ZU;2-T
Abstract
We present real-time measurements of surface structure evolution during qua ntum dot growth in InAs/GaAs grown by molecular-beam epitaxy. The measureme nts were made using an ultraviolet light-scattering technique in which the 254 nm line of a mercury lamp is used as the light source. This technique p rovides sensitivity to roughness on lateral lengthscales as low as 154 nm f or our setup. Using this technique, we can detect the onset of quantum dot formation in this system, as indicated by reflection high-energy electron-d iffraction measurements. The continuous increase in the: scattering signal after the dots have formed, is explained in terms of diffusion-limited grow th and ripening of the large islands that coexist with the quantum dots. [S 0163-1829(99)09047-5].