Energy states in ZnSe-GaAs heterovalent quantum structures

Citation
M. Funato et al., Energy states in ZnSe-GaAs heterovalent quantum structures, PHYS REV B, 60(24), 1999, pp. 16652-16659
Citations number
15
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
0163-1829 → ACNP
Volume
60
Issue
24
Year of publication
1999
Pages
16652 - 16659
Database
ISI
SICI code
0163-1829(199912)60:24<16652:ESIZHQ>2.0.ZU;2-6
Abstract
We investigate the energy states in ZnSe-GaAs heterovalent quantum structur es. In the ZnSe-GaAs heterovalent heterostructures, the band offsets are co ntrollable, and therefore different offsets can artificially be put at both sides of the GaAs wells through the control of the growth sequence fanning the interfaces, which brings unique characteristics on the heterovalent qu antum structures. The characteristic features are examined by the optical-a bsorption measurement. Dependence of the absorption edge on the offsets and the well width reveals the presence of an electric field; by changing the valence-band offset at one side of the GaAs well from 0.6 to 1.1 eV, while keeping that at the other side constant at 0.6 eV, we observe that the abso rption edge energies are shifted toward lower energy and that the degree of the redshift depends on the GaAs well width. These experimental results ar e well explained by the theoretical calculation of the Poisson and Schrodin ger equations. On the other hand, the barrier width dependence exhibits the anomalous behavior that cannot be expressed by the theoretical analyses an d is interpreted in terms of the charge transfer within the barrier region. [S0163-1829(99)15047-1].