Fabrication of thin-film cleaved cavities using a bonding and cleaving fixture

Citation
Dw. Mcalister et al., Fabrication of thin-film cleaved cavities using a bonding and cleaving fixture, IEEE PHOTON, 12(1), 2000, pp. 22-24
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
1041-1135 → ACNP
Volume
12
Issue
1
Year of publication
2000
Pages
22 - 24
Database
ISI
SICI code
1041-1135(200001)12:1<22:FOTCCU>2.0.ZU;2-5
Abstract
lA novel method for the fabrication of cleaved-cavities has been developed that uses a copper plate assembly to support semiconductor layers after sub strate removal. PbSe layers were grown through a combination of molecular b eam epitaxy and liquid phase epitaxy on Si (100) substrates using CaF2 and BaF2 buffer layers. After growth the sample was bonded to the edges of a co pper plate assembly epilayer down and the BaF2 buffer layer was etched away allowing for growth substrate removal. This technique allows fabrication o f cleaved Fabry-Perot resonant cavities by separating the copper plates aft er the substrate is removed.