Six-bilayer periodic structures in GaN grown on GaAs(001)

Citation
M. Funato et al., Six-bilayer periodic structures in GaN grown on GaAs(001), APPL PHYS L, 76(3), 2000, pp. 330-332
Citations number
14
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
76
Issue
3
Year of publication
2000
Pages
330 - 332
Database
ISI
SICI code
0003-6951(20000117)76:3<330:SPSIGG>2.0.ZU;2-S
Abstract
We have observed six-bilayer periodic structures in GaN grown on GaAs(001). The periodicity occurs along the zinc-blende(ZB)-[111]A direction, suggest ing that it originates from stacking faults on close-packed planes. GaN gro wn on GaAs includes both ZB and wurtzite phases as a result of formation of stacking faults and the periodic structures are mostly located between the se two crystalline phases. Based on this observation, possible layer stacki ng sequences are proposed, which are classified as 6H polytypes. (C) 2000 A merican Institute of Physics. [S0003-6951(00)00303-X].