New molecular compound precursor for aluminum chemical vapor deposition

Citation
T. Shinzawa et al., New molecular compound precursor for aluminum chemical vapor deposition, APPL ORGAN, 14(1), 2000, pp. 14-24
Citations number
23
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Chemistry
Journal title
APPLIED ORGANOMETALLIC CHEMISTRY
ISSN journal
0268-2605 → ACNP
Volume
14
Issue
1
Year of publication
2000
Pages
14 - 24
Database
ISI
SICI code
0268-2605(200001)14:1<14:NMCPFA>2.0.ZU;2-8
Abstract
A new type of precursor for aluminum chemical vapor deposition (AI-CVD) has been developed by mixing dimethylaluminum hydride (DMAH) and trimethylalum inum (TMA). The new precursor has proven itself to be effective for Al-CVD, where a good selectivity between the Si and the SiO2 mask, a 3.0 mu Omega cm resistivity and a pure Al film with low C and O contamination levels (un der 100 ppm) were achieved. Quadrupole mass and infrared absorption analysi s have shown that the precursor contains a new molecular compound, consisti ng of a DMAH monomer and a TMA monomer, The mixture has lower viscosity tha n DMAH and can be easily bubbled for a stable precursor vapor supply. Copyr ight (C) 2000 John Wiley & Sons, Ltd.