Observation of two independent sources for arsenic carryover

Citation
Y. Moon et al., Observation of two independent sources for arsenic carryover, J CRYST GR, 208(1-4), 2000, pp. 160-164
Citations number
17
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
0022-0248 → ACNP
Volume
208
Issue
1-4
Year of publication
2000
Pages
160 - 164
Database
ISI
SICI code
0022-0248(200001)208:1-4<160:OOTISF>2.0.ZU;2-V
Abstract
The two independent As carryover processes were observed by photoluminescen ce (PL) and high-resolution X-ray diffraction (HRXRD) from the same InAsxP1 -x/InP single quantum well(SQW) samples formed after AsH3 exposure. The com bination of the SQW with a very thin InP capping layer enabled us to observ e by HRXRD the weak modulation peaks from the InP buffer layer, where a min ute amount of As was incorporated due to the As carryover from the interior of the reactor. Simultaneously the PL peak energies blue-shifted with AsH3 treatment temperature due to the excess As adsorbed on the InP surface. Th ese results clearly show that the As carryover from two sources occurs inde pendently, and simultaneously. (C) 2000 Elsevier Science B.V. All rights re served.