The two independent As carryover processes were observed by photoluminescen
ce (PL) and high-resolution X-ray diffraction (HRXRD) from the same InAsxP1
-x/InP single quantum well(SQW) samples formed after AsH3 exposure. The com
bination of the SQW with a very thin InP capping layer enabled us to observ
e by HRXRD the weak modulation peaks from the InP buffer layer, where a min
ute amount of As was incorporated due to the As carryover from the interior
of the reactor. Simultaneously the PL peak energies blue-shifted with AsH3
treatment temperature due to the excess As adsorbed on the InP surface. Th
ese results clearly show that the As carryover from two sources occurs inde
pendently, and simultaneously. (C) 2000 Elsevier Science B.V. All rights re
served.