Nanocrystal memory cell using high-density Si0.73Ge0.27 quantum dot array

Citation
Dh. Chae et al., Nanocrystal memory cell using high-density Si0.73Ge0.27 quantum dot array, J KOR PHYS, 35, 1999, pp. S995-S998
Citations number
3
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
0374-4884 → ACNP
Volume
35
Year of publication
1999
Supplement
S
Pages
S995 - S998
Database
ISI
SICI code
0374-4884(199912)35:<S995:NMCUHS>2.0.ZU;2-3
Abstract
Principles of operation of a single electron memory cell using nanocrystals incorporated in the gate oxide of a MOSFET were investigated and possibili ties for the application to a multi-level flash memory cell with high relia bility and low power using the Coulomb blockade effect at room temperature were shown. Single electron memory cells using Si-0.73 Ge-0.27 nanocrystal array as a storage electrode were fabricated and characterized. The nanocry stals were deposited as amorphous islands in LPCVD and were crystallized by rapid thermal annealing. The size of deposited nanocrystals was observed t o be about 5 nm and the density was higher than 10(12) cm(-2). From the res ult of the characterization of the fabricated devices, the threshold voltag e shift corresponding to charging of single electron per nanocrystal was ob served to be greater than 2 V, from which the density of the nanocrystal ar ray was estimated to be about 2.6 x 10(12) cm(-2). Programming characterist ics of the device with respect to time showed a multi-step tunneling phenom enon, which seems to be due to an interaction among closely-spaced quantum dots.