Nanoscale elemental imaging of semiconductor materials using focused ion beam secondary ion mass spectrometry

Citation
Fa. Stevie et al., Nanoscale elemental imaging of semiconductor materials using focused ion beam secondary ion mass spectrometry, J VAC SCI B, 17(6), 1999, pp. 2476-2482
Citations number
4
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
1071-1023 → ACNP
Volume
17
Issue
6
Year of publication
1999
Pages
2476 - 2482
Database
ISI
SICI code
1071-1023(199911/12)17:6<2476:NEIOSM>2.0.ZU;2-C
Abstract
The semiconductor industry demands elemental information from ever smaller regions. The sensitivity of secondary ion mass spectrometry, coupled with t he lateral resolution of a focused ion beam, can provide nanoscale elementa l data that are competitive with that from other analytical techniques. Ion images of the sidewalls in repetitive semiconductor features tilted to pre sent a large surface area have shown boron contamination after an etch proc ess. The boron is removed by a specific cleaning step. Spat defect analysis was enhanced by the use of mass spectra that provide information on a rang e of elements before the, defect is removed by sputtering. Ion implanted sa mples were analyzed in cross section and the implant shape defected. Summat ion of the secondary ion counts in the implant cross section over a few mic rometers resulted in detection limits below 0.1 at. %. Implantation profile s have been detected for Al, Cr, Na, Li, and K without the aid of secondary ion enhancing species, such as oxygen or cesium. (C) 1999 American Vacuum Society. [S0734-211X(99)04106-2].