Electrical properties of the Si implantation in Mg doped p-GaN

Citation
Wc. Lai et al., Electrical properties of the Si implantation in Mg doped p-GaN, PHYS ST S-B, 216(1), 1999, pp. 561-565
Citations number
17
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
0370-1972 → ACNP
Volume
216
Issue
1
Year of publication
1999
Pages
561 - 565
Database
ISI
SICI code
0370-1972(199911)216:1<561:EPOTSI>2.0.ZU;2-2
Abstract
This work performs Si ion implantation to activate and convert the electric al conduction of p-GaN films from p-type to n-type. Multiple implantation m ethod is used to form a uniform Si implanted region in the p-type GaN epita xial layer. Implantation energies for the multiple implantation are 10, 100 , and 200 keV. The implantation dose is 5 x 10(15) cm(2) for each implantat ion energy. After implantation, the samples were annealed in an N-2 ambient for different annealing temperatures and annealing times. The activation e fficiency reaches as high as 20% when annealing the sample at 1000 degrees C,. The carrier activation energy is about 720 meV. The low activation ener gy indicates that the hopping process mechanism is the dominant mechanism f or the activation of the Si implant in p-GaN. In addition, the rectifying I -V characteristic of the p-n GaN diode is also examined.