We have investigated availability of fast ion beams for observing the forwa
rd scattering effect of Auger electrons emitted from a crystal surface. The
angle-resolved patterns of Si KLL-Auger electrons (similar to 1.6 keV) ind
uced by 12 MeV He2+ exhibited clear crystallographic symmetry including enh
anced intensities in the [100] and [111] directions. The results demonstrat
e applicability of the angle-resolved spectroscopy of ion-induced Auger ele
ctrons to structural analysis of surfaces and interfaces. (C) 1999 Elsevier
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