Stable microcrystalline silicon thin-film transistors produced by the layer-by-layer technique

Citation
Pri. Cabarrocas et al., Stable microcrystalline silicon thin-film transistors produced by the layer-by-layer technique, J APPL PHYS, 86(12), 1999, pp. 7079-7082
Citations number
24
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
0021-8979 → ACNP
Volume
86
Issue
12
Year of publication
1999
Pages
7079 - 7082
Database
ISI
SICI code
0021-8979(199912)86:12<7079:SMSTTP>2.0.ZU;2-4
Abstract
Microcrystalline silicon thin films prepared by the layer-by-layer techniqu e in a standard radio-frequency glow discharge reactor were used as the act ive layer of top-gate thin-film transistors (TFTs). Crystalline fractions a bove 90% were achieved for silicon films as thin as 40 nm and resulted in T FTs with smaller threshold voltages than amorphous silicon TFTs, but simila r field effect mobilities of around 0.6 cm(2)/V s. The most striking proper ty of these microcrystalline silicon transistors was their high electrical stability when submitted to bias-stress tests. We suggest that the excellen t stability of these TFTs, prepared in a conventional plasma reactor, is du e to the stability of the mu c-Si:H films. These TFTs can be used in applic ations that require high stability for which a-Si:H TFTs cannot be used, su ch as multiplexed row and column drivers in flat-panel display applications , and active matrix addressing of polymer light-emitting diodes. (C) 1999 A merican Institute of Physics. [S0021-8979(99)05324-4].