Growth habit of rhombohedral Bi thin films on zinc-blende CdTe substrates with various orientations

Citation
Y. Kim et al., Growth habit of rhombohedral Bi thin films on zinc-blende CdTe substrates with various orientations, J VAC SCI A, 17(6), 1999, pp. 3473-3476
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
0734-2101 → ACNP
Volume
17
Issue
6
Year of publication
1999
Pages
3473 - 3476
Database
ISI
SICI code
0734-2101(199911/12)17:6<3473:GHORBT>2.0.ZU;2-7
Abstract
Rhombohedral Bi thin films have been grown on zinc-blende (111), (211) and (100) CdTe substrates by molecular beam epitaxy. Reflection high-energy ele ctron diffraction patterns showed that Bi grew layer-by-layer on the CdTe s ubstrates without any reconstruction. X-ray diffraction theta-2 theta scans revealed that the Bi films grown on (111) CdTe are (00.l) oriented and tha t the Bi films on (100) CdTe are (10.4) oriented. X-ray pole figures from t he Bi films and the CdTe substrates indicated that Bi (00.l) on (211) CdTe grew along the CdTe (111) direction, like in the case of the Bi films on (1 11) CdTe. Most Bi grains on (100) CdTe select one particular direction out of the four possible directions in the presence of an off-axis tilt relativ e to the (100) substrate surface normal. (C) 1999 American Vacuum Society. [S0734-2101(99)00306-1].