The progression of interface structure through sputtered Co/Cu and Co/Pt multilayer films

Citation
Bd. Fulthorpe et al., The progression of interface structure through sputtered Co/Cu and Co/Pt multilayer films, J PHYS-COND, 11(43), 1999, pp. 8477-8487
Citations number
17
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN journal
0953-8984 → ACNP
Volume
11
Issue
43
Year of publication
1999
Pages
8477 - 8487
Database
ISI
SICI code
0953-8984(19991101)11:43<8477:TPOIST>2.0.ZU;2-1
Abstract
The progression of interface structure through some Co/Cu and ColPt multila yer systems, grown on silicon and glass substrates respectively, has been s tudied using grazing incidence x-ray scattering. Simulations of the data sh ows that the interface characteristics of the Co/Cu system propagate unchan ged with increasing numbers of bilayers. The interface roughness, lateral l ength scale and fractal dimension remain constant across the series of samp les. In contrast, a reduction in the interface conformality between top and bottom surfaces with respect to increasing numbers of bilayers is observed in the Co/Pt system; however the roughness correlation between successive layers is largely maintained. Magnetization data for Co/Cu indicate that th e Co layer immediately adjacent to the substrate is magnetically 'dead'. Th is could result from mixing of the cobalt and silicon oxide species at the substrate interface.