Control of nucleation site and growth orientation of bulk GaN crystals

Citation
M. Yano et al., Control of nucleation site and growth orientation of bulk GaN crystals, JPN J A P 2, 38(10A), 1999, pp. L1121-L1123
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
38
Issue
10A
Year of publication
1999
Pages
L1121 - L1123
Database
ISI
SICI code
0021-4922(19991001)38:10A<L1121:CONSAG>2.0.ZU;2-O
Abstract
The melt growth of bulk GaN crystals is hindered by high nitrogen pressure (similar to 45000 atm) at melting point. Recently, bulk GaN crystals were g rown at a pressure of similar to 100 atm by means of Na flux. However the f lux growth method failed to control the nucleation site and growth orientat ion of GaN. In this work, oriented GaN crystals were obtained by means of a seeded Na Bur method with the addition of oriented AlN(0001) film to the g rowth ambient. The nucleation of bulk GaN was spatially confined to the top surface of the AIN film and grown with the GaN[0001] axis parallel to the AlN[0001] axis. In contrast: no bulk GaN was observed on the SiC(0001) surf ace which was also lattice matched with the GaN. Both X-ray diffraction (XR D) and cathodoluminescence confirm the high quality of the as-grown GaN.