To observe defect levels near the midgap in 3C-SiC on Si (001) substrates,
deep-level-transient spectroscopy (DLTS) measurement was carried out in the
temperature range of 100 K to about 500 K. A DLTS peak appeared near 150 K
for all samples. The spectra of some samples showed a broad signal near ro
om temperature. Above 450 K, no peak appeared in the spectra of any sample.
This indicates that electron traps with concentration > 10(13) cm(-3) do n
ot exist near the midgap. Isothermal constant-voltage-capacitance transient
spectroscopy (CVCTS) was also carried out at temperatures above 400 K, and
its results supported this conclusion.