Search for midgap levels in 3C-SiC grown on Si substrates

Citation
N. Yamada et al., Search for midgap levels in 3C-SiC grown on Si substrates, JPN J A P 2, 38(10A), 1999, pp. L1094-L1095
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
38
Issue
10A
Year of publication
1999
Pages
L1094 - L1095
Database
ISI
SICI code
0021-4922(19991001)38:10A<L1094:SFMLI3>2.0.ZU;2-S
Abstract
To observe defect levels near the midgap in 3C-SiC on Si (001) substrates, deep-level-transient spectroscopy (DLTS) measurement was carried out in the temperature range of 100 K to about 500 K. A DLTS peak appeared near 150 K for all samples. The spectra of some samples showed a broad signal near ro om temperature. Above 450 K, no peak appeared in the spectra of any sample. This indicates that electron traps with concentration > 10(13) cm(-3) do n ot exist near the midgap. Isothermal constant-voltage-capacitance transient spectroscopy (CVCTS) was also carried out at temperatures above 400 K, and its results supported this conclusion.