Development of lead zirconate titanate family thick films on various substrates

Citation
Y. Akiyama et al., Development of lead zirconate titanate family thick films on various substrates, JPN J A P 1, 38(9B), 1999, pp. 5524-5527
Citations number
15
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
38
Issue
9B
Year of publication
1999
Pages
5524 - 5527
Database
ISI
SICI code
0021-4922(199909)38:9B<5524:DOLZTF>2.0.ZU;2-8
Abstract
We propose a POS (Piezo on Silicon) actuator, which comprise piezoelectric materials on a silicon substrate, and the actuation mechanism uses a bendin g vibration of a unimorph structure. Realization of this device was attempt ed, and the low-temperature sintering of piezoelectric ceramics, optimizati on of the screen-printing method and the barrier layer on a silicon substra te were developed. Regarding PMN-PZ-PT and PNN-PZ-PT bulk samples, a sinter ing temperature of 850 degrees C became possible with the addition of Li-Bi oxide. Pt-Rh/TaN was used as a barrier layer, and a 30 mu m-thick PNN-PZ-P T film prepared at 900 degrees C on a Si substrate with a Pt-Rh/TaN buffer layer exhibited epsilon(r) = 2790, E-c = 8.6 kV/cm and P-r = 5.7 mu C/cm(2) .