The quality of organic low-k methylsilsesquioxane (MSQ) film is degraded by
the damage of oxygen plasma and hygroscopic behavior during photoresist st
ripping. In addition, the interaction between MSQ and copper is worth inves
tigating. In this work, we have studied the H-2 plasma treatment to improve
the quality and enhance the copper penetration resistance of MSQ, Experime
ntal results show the leakage current of MSQ decreases as the H-2 plasma tr
eatment time is increased. The dielectric constant of treated samples also
remains constant (similar to 2.7). In addition, the copper diffusion resist
ance of MSQ film is significantly promoted. The H-2 plasma treatment can pr
ovide additional hydrogen to passivate the inner structure of porous MSQ fi
lm as well as reduce the probability of moisture uptake and interaction wit
h Cu atoms. Therefore, the low-k dielectric properties of MSQ are significa
ntly enhanced by H-2 plasma treatment. (C) 1999 American Vacuum Society. [S
0734-211X(99)05105-7].