Effects of H-2 plasma treatment on low dielectric constant methylsilsesquioxane

Citation
Tc. Chang et al., Effects of H-2 plasma treatment on low dielectric constant methylsilsesquioxane, J VAC SCI B, 17(5), 1999, pp. 2325-2330
Citations number
11
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
1071-1023 → ACNP
Volume
17
Issue
5
Year of publication
1999
Pages
2325 - 2330
Database
ISI
SICI code
1071-1023(199909/10)17:5<2325:EOHPTO>2.0.ZU;2-I
Abstract
The quality of organic low-k methylsilsesquioxane (MSQ) film is degraded by the damage of oxygen plasma and hygroscopic behavior during photoresist st ripping. In addition, the interaction between MSQ and copper is worth inves tigating. In this work, we have studied the H-2 plasma treatment to improve the quality and enhance the copper penetration resistance of MSQ, Experime ntal results show the leakage current of MSQ decreases as the H-2 plasma tr eatment time is increased. The dielectric constant of treated samples also remains constant (similar to 2.7). In addition, the copper diffusion resist ance of MSQ film is significantly promoted. The H-2 plasma treatment can pr ovide additional hydrogen to passivate the inner structure of porous MSQ fi lm as well as reduce the probability of moisture uptake and interaction wit h Cu atoms. Therefore, the low-k dielectric properties of MSQ are significa ntly enhanced by H-2 plasma treatment. (C) 1999 American Vacuum Society. [S 0734-211X(99)05105-7].