Micro-track profiles of ESD damaged AMR and GMR heads

Citation
Ek. Jang et al., Micro-track profiles of ESD damaged AMR and GMR heads, IEEE MAGNET, 35(5), 1999, pp. 2616-2618
Citations number
11
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON MAGNETICS
ISSN journal
0018-9464 → ACNP
Volume
35
Issue
5
Year of publication
1999
Part
1
Pages
2616 - 2618
Database
ISI
SICI code
0018-9464(199909)35:5<2616:MPOEDA>2.0.ZU;2-T
Abstract
We systematically studied the micro-track profiles of ESD damaged AMR and s pin valve GMR heads, and correlated with the dynamic electric performances of each head. Spin valve GMR heads and two types of AMR heads made by diffe rent structure and material are ESD (HBM) stressed and studied. We observed double peak in micro-track profile after more than 10 % change of MR resis tance. This means that the centers of AMR and GMR sensors become less sensi tive before the total melting of MR element during ESD zapping. We also obs erved double peak micro-track profile after pin reversal of SV head. We att ribute this to changes in the domain configuration caused by partial revers al of pinned layer moment along MR (GMR) stripe.