Silicon dots/clusters in silicon nitride: photoluminescence and electron spin resonance

Citation
Va. Gritsenko et al., Silicon dots/clusters in silicon nitride: photoluminescence and electron spin resonance, THIN SOL FI, 353(1-2), 1999, pp. 20-24
Citations number
26
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
0040-6090 → ACNP
Volume
353
Issue
1-2
Year of publication
1999
Pages
20 - 24
Database
ISI
SICI code
0040-6090(19990929)353:1-2<20:SDISNP>2.0.ZU;2-W
Abstract
Photoluminescence (PL) properties of SiNx (0.51 < x < 1.3) films are studie d. A visible luminescence near the UV region is observed and the PL intensi ty and peak positions are found to be governed by the excess silicon compos ition. A large scale potential fluctuation due to the spatial variation of chemical composition in SINx is proposed to explain these observations, In addition, non-radiative recombination centers (N3Si ., N2SiSi ., NSi2Si ., or Si3Si .), which have prominent effect on the luminescence intensity, are also studied using electron spin resonance (ESR) measurement. The ESR resu lts suggest that the excess silicon content should not be too high in order to have a strong PL. (C) 1999 Elsevier Science S.A. All rights reserved.