A new method for evaluation of surface recombination in heterojunction bipolar transistors by magnetotransport

Citation
T. Nozu et al., A new method for evaluation of surface recombination in heterojunction bipolar transistors by magnetotransport, SOL ST ELEC, 43(8), 1999, pp. 1347-1353
Citations number
18
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
0038-1101 → ACNP
Volume
43
Issue
8
Year of publication
1999
Pages
1347 - 1353
Database
ISI
SICI code
0038-1101(199908)43:8<1347:ANMFEO>2.0.ZU;2-M
Abstract
A new method for evaluation of surface recombination in heterojunction bipo lar transistors (HBTs) employing magnetotransport is reported. A new model which describes the motion of electrons in the base was developed on the ba sis of a diffusion equation in a magnetic field. It was shown experimentall y and analyzed by this model that the magnetic force vertical to the emitte r/base junction modified the electron path and suppressed the diffusion of electron to the extrinsic base surface where surface recombination took pla ce. As a result, the surface recombination current was decreased and the cu rrent gain was increased. The present method was applied to an AlGaAs/GaAs HBT with a base doped with C at 5 x 10(19) cm(-3). The surface recombinatio n velocity, relaxation time, and mobility of electrons in the base were est imated without any reference samples to be 1 x 10(7) cm/s, 40 ps, and 2130 cm(2)/Vs, respectively, which are in a good agreement with recent data. (C) 1999 Elsevier Science Ltd. All rights reserved.