Formation of very thin epitaxial Al2O3 pre-layer with very smooth surface on Si (111) using a protective oxide layer

Citation
Yc. Jung et al., Formation of very thin epitaxial Al2O3 pre-layer with very smooth surface on Si (111) using a protective oxide layer, JPN J A P 1, 38(4B), 1999, pp. 2333-2336
Citations number
18
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
38
Issue
4B
Year of publication
1999
Pages
2333 - 2336
Database
ISI
SICI code
0021-4922(199904)38:4B<2333:FOVTEA>2.0.ZU;2-#
Abstract
We propose the formation of an Al2O3 pre-layer using a protective Si-oxide layer and an Al layer. Deposition of a thin layer of aluminum onto a Si sur face covered with a thin Si-oxide layer and annealing at 800 degrees C led to the growth of Al2O3 layers on Si (111). A very smooth and uniform Al2O3 (111) pre-layer film was epitaxially grown on a Si (111) substrate. The sur face of the gamma-Al2O3 film grown on the Al2O3 pre-layer was very smooth w ith a Z range of similar to 3 nm. However, the surface grown without the Al 2O3 pre-layer had numerous convex structures concerning with SiOx clusters with a Z range of similar to 10 nm. Etching of the Si substrate by N2O gas could be avoided in the initial growth stage by the Al2O3 pre-layer It was confirmed that the Al2O3 pre-layer was effective in improving the surface m orphology of the very thin gamma-Al2O3 films.