Fluorescence EXAFS study on local structures around Bi atoms in InAs1-xBixgrown by low-pressure MOVPE

Citation
H. Ofuchi et al., Fluorescence EXAFS study on local structures around Bi atoms in InAs1-xBixgrown by low-pressure MOVPE, JPN J A P 1, 38, 1999, pp. 545-547
Citations number
16
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
38
Year of publication
1999
Supplement
1
Pages
545 - 547
Database
ISI
SICI code
0021-4922(1999)38:<545:FESOLS>2.0.ZU;2-U
Abstract
We have investigated local structures around Bi in metalorganic-vapor-phase epitaxy (MOVPE)-grown InAs1-xBix (x=0.007, 0.016 and 0.028) by fluorescenc e extended X-ray absorption fine structure (EXAFS). The EXAFS analysis reve aled that even in higher-Bi-concentration InAs1-xBix (x=0.028) the majority of Bi atoms substituted the As sites in the zincblende-type InAs lattice. Obtained Bi-In bond length was 2.81-2.82 Angstrom, which was 7% longer than the In-As bond length (2.623 Angstrom) in the InAs bulk. Such a long Bi-In bond causes local distortion in the InAs lattice and hence disorder. The d egree of the distortion and disorder was observed to increase with the Bi c oncentration.