Temperature dependence of the charge collection efficiency in heavily irradiated silicon detectors

Citation
Wh. Bell et al., Temperature dependence of the charge collection efficiency in heavily irradiated silicon detectors, NUCL INST A, 435(1-2), 1999, pp. 187-193
Citations number
12
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
0168-9002 → ACNP
Volume
435
Issue
1-2
Year of publication
1999
Pages
187 - 193
Database
ISI
SICI code
0168-9002(19991001)435:1-2<187:TDOTCC>2.0.ZU;2-T
Abstract
Two silicon diode detectors, Al/n(+)/n/p(+)/Al, were exposed to fluences of 1.19 x 10(14) and 2.23 x 10(15) equivalent 1 MeV neutrons/cm(2), respectiv ely. After this exposure the detectors were stored at room temperatures for 2 yr (1.19 x 10(14)) and six months (2.23 x 10(15)). During this time they were thermally cycled around 4.2 K and room temperature a number of times in order to make measurements. The charge collection efficiency is measured to be (at 77 K) 100% for the less severely irradiated detector and 50% for the detector exposed to high levels of radiation. The same results apply t o operation at 4.2 K, while no recovery is observed at 195 K. By examining the signal response of the irradiated detectors to ct particles, it is show n that some of the radiation damage after reverse annealing is in the form of electron and hole traps, which are either weakly, or not at all, tempera ture dependent. (C) 1999 Elsevier Science B.V. All rights reserved.