A new rapid reduction-carbonization route to nanocrystalline beta-SiC

Citation
Jq. Hu et al., A new rapid reduction-carbonization route to nanocrystalline beta-SiC, CHEM MATER, 11(9), 1999, pp. 2369-2371
Citations number
31
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
CHEMISTRY OF MATERIALS
ISSN journal
0897-4756 → ACNP
Volume
11
Issue
9
Year of publication
1999
Pages
2369 - 2371
Database
ISI
SICI code
0897-4756(199909)11:9<2369:ANRRRT>2.0.ZU;2-T
Abstract
Nanocrystalline beta-SiC was successfully synthesized at 600 degrees C thro ugh a new rapid reduction-carbonization route, in which metallic Na was use d as the reductant, and activated carbon and tetrachlorosilane (SiCl4) were used as source materials. X-ray powder diffraction indicates that beta-SiC with high crystallinity is obtained. Transmission electron microscopy imag es show that the as-prepared SiC powders consist of spherical particles wit h an average diameter of 25 nm. An atomic ratio of Si to C of 1.08:1.00 was determined from X-ray photoelectron spectra. A possible formation mechanis m for nanocrystalline beta-SiC is proposed.