High-temperature operation (70 degrees C, 50 mW) of 660-nm-band InGaAlPZn-diffused window lasers fabricated using highly Zn-doped GaAs layers

Citation
M. Watanabe et al., High-temperature operation (70 degrees C, 50 mW) of 660-nm-band InGaAlPZn-diffused window lasers fabricated using highly Zn-doped GaAs layers, IEEE S T QU, 5(3), 1999, pp. 750-755
Citations number
17
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
ISSN journal
1077-260X → ACNP
Volume
5
Issue
3
Year of publication
1999
Pages
750 - 755
Database
ISI
SICI code
1077-260X(199905/06)5:3<750:HO(DC5>2.0.ZU;2-L
Abstract
660-nm-band InGaAlP Zn-diffused window structure lasers have been Fabricate d using highly Zn-doped GaAs layers grown by metal-organic chemical vapor d eposition as a Zn diffusion source; A multiquantum-well active region was d isordered by Zn diffusion, resulting in band-gap expansion and phololumines cence-wavelength shortening. In this Zn diffusion method, the Zn diffusion length from the active region into the n-cladding layer and the PL-waveleng th shortening mere easily controlled by controlling the Zn-dopant amount an d the Zn-doped GaAs layer thickness. This method is very suitable for mass production. Window lasers fabricated by this method operate at up to 180 mW at 25 degrees C, and as high as 50 mW at 85 degrees C, and 30 mW at 95 deg rees C with no COD. The lasers have been operating stably for more than 120 0 h at 70 degrees C temperature and 50-mW output power, The mean time to fa ilure was predicted as being more than 37 000 h.