M. Watanabe et al., High-temperature operation (70 degrees C, 50 mW) of 660-nm-band InGaAlPZn-diffused window lasers fabricated using highly Zn-doped GaAs layers, IEEE S T QU, 5(3), 1999, pp. 750-755
660-nm-band InGaAlP Zn-diffused window structure lasers have been Fabricate
d using highly Zn-doped GaAs layers grown by metal-organic chemical vapor d
eposition as a Zn diffusion source; A multiquantum-well active region was d
isordered by Zn diffusion, resulting in band-gap expansion and phololumines
cence-wavelength shortening. In this Zn diffusion method, the Zn diffusion
length from the active region into the n-cladding layer and the PL-waveleng
th shortening mere easily controlled by controlling the Zn-dopant amount an
d the Zn-doped GaAs layer thickness. This method is very suitable for mass
production. Window lasers fabricated by this method operate at up to 180 mW
at 25 degrees C, and as high as 50 mW at 85 degrees C, and 30 mW at 95 deg
rees C with no COD. The lasers have been operating stably for more than 120
0 h at 70 degrees C temperature and 50-mW output power, The mean time to fa
ilure was predicted as being more than 37 000 h.